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XU Wei, WANG Shengkai, XU Yang, WANG Yinghui, CHEN Dapeng, LIU Honggang. A new wafer bonding method based on spot pressing technique[J]. TRANSACTIONS OF THE CHINA WELDING INSTITUTION, 2016, 37(9): 125-128.
Citation: XU Wei, WANG Shengkai, XU Yang, WANG Yinghui, CHEN Dapeng, LIU Honggang. A new wafer bonding method based on spot pressing technique[J]. TRANSACTIONS OF THE CHINA WELDING INSTITUTION, 2016, 37(9): 125-128.
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A new wafer bonding method based on spot pressing technique

  • 1.

    Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Beijing 100029, China;Microwave Device and IC Dept., Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

  • 2.

    Microwave Device and IC Dept., Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Smart Sensing R & D Centre, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

  • 3.

    Smart Sensing R & D Centre, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

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  • Received Date: March 12, 2016
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    • Abstract
  • Au-Au thermocompression bonding is widely used in many applications of semiconductor manufacturing. In order to improve the bonding method, a new wafer bonding method based on spot pressing technique was proposed for the first time. The bonded area dependence of bonding temperature, pressure and time were investigated. In addition, the bonded area ratio was compared between conventional Au-Au thermocompression bonding and spot pressing bonding by the image of scanning acoustic microscopy. The bonded area selectivity of SPB was discussed at the end of this article. The results show that the bonding process is simple and stable and the bonded area selectivity is also good in spot pressing bonding. which has an extesive prospect in applications of semiconductor manufacturing.
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