Review on high temperature resistant packaging technology for new genetation power semiconductor devices

The new generation semiconductor materials have good conversion characteristics and heat tolerance, enabling the power electronic devices to operate at 500 ℃ or even higher, however, their usage over such wide temperature ranges is limited by the temperature stability of packag. This paper presents the structural requirements of high temperature resistant packagingand analyzes the current research status of high temperature resistant joining technologies (including high temperature lead-free solder joining, low temperature silver sintering-bonding, solid-liquid inter-diffusion bonding and transient liquid phase sintering-bonding) as well as problems. The future challenge and prospect related to high temperature resistant packaging is also proposed in this article.