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先进封装铜柱凸点互连技术及可靠性发展现状

Development status of advanced packaging copper pillar bump interconnection technology and reliability

  • 摘要: 随着电子元器件不断向轻量化方向发展,铜柱凸点凭借其高径比柱状结构,能够在相同面积内实现更小的节距和更高的互连密度,因而成为一种兼具高性能与高可靠性的倒装芯片互连方案. 文中对比了传统C4凸点与铜柱凸点之间的差异,总结了铜柱凸点结构的独特特征及其所带来的热学、电学和力学性能优势,同时也指出了该技术目前存在的问题与挑战. 文中还讨论了电镀制备铜柱凸点的工艺流程,详细阐述了镀液成分和电镀参数对凸点质量的影响,表明通过优化添加剂种类、含量以及电镀工艺条件,可制备出高度平整、一致性优异的铜柱凸点. 此外,分析了铜柱凸点在热循环和电迁移可靠性方面的表现,包括在热老化、热循环和电迁移等试验中凸点的形貌与组织变化,探讨了凸点形状、表面处理及底部填充等因素对可靠性的影响,最后,对铜柱凸点未来的发展方向进行了总结与展望.

     

    Abstract: With the development of lightweight electronic components, copper pillar bumps (CPBs) have emerged as a flip-chip interconnection solution that combines high performance and high reliability, owing to their high-aspect-ratio structure, which enables finer pitch and higher interconnection density within the same area. A comparison was presented between traditional C4 bumps and CPBs, highlighting the unique structural characteristics of CPBs and their advantages in thermal, electrical, and mechanical properties, while also addressing existing challenges and issues associated with this technology. The electroplating process for fabricating CPBs was discussed, with a detailed explanation of how electroplating solution composition and electroplating parameters affect bump quality. Optimization of the types and concentrations of additives, as well as the electroplating conditions, could enable CPBs with excellent surface planarity and uniformity. Furthermore, the reliability performance of CPBs under thermal cycling and electromigration conditions was analyzed, including morphological and microstructural changes observed during thermal aging, thermal cycling, and electromigration tests. The influence of factors such as bump shape, surface treatment, and underfill on reliability was also examined. Finally, the future development direction of CPBs was summarized and projected.

     

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