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纳米铜基柔性导电薄膜制备现状及前景

黄永德, 彭鹏, 郭伟, 周兴汶, 程国文, 刘强

黄永德, 彭鹏, 郭伟, 周兴汶, 程国文, 刘强. 纳米铜基柔性导电薄膜制备现状及前景[J]. 焊接学报.
引用本文: 黄永德, 彭鹏, 郭伟, 周兴汶, 程国文, 刘强. 纳米铜基柔性导电薄膜制备现状及前景[J]. 焊接学报.

纳米铜基柔性导电薄膜制备现状及前景

基金项目: 国家重点研发计划资助项目(2017YFB1104900);国家自然科学基金资助项目(51975033);江西省重点研发计划资助项目(20171BBE50010) ;北京市自然科学基金资助项目(3192020)
详细信息
    作者简介:

    黄永德,博士,教授,硕士生导师;主要从事电子封装技术方面的科研和教学工作;Email: huangydhm@nchu.edu.cn

    通讯作者:

    周兴汶,博士,师资博士后;Email: xingwenzhou@suda.edu.cn.

  • 中图分类号: TN 249

  • 摘要: 纳米铜基导电薄膜具有高导电、高性价比且易与柔性基材结合等优点,在下一代柔性电子产品领域具有广泛的应用前景. 然而,纳米铜基导电薄膜在制备的过程中易被氧化,成为制备高导电纳米铜基导电薄膜的难题. 文中从油墨配方、印刷方法、烧结方法等方面系统的介绍了纳米铜基柔性导电薄膜的制造方法,着重介绍了目前抗氧化油墨的设计思路,阐明了目前柔性电子先进微纳连接技术的工艺流程,对比了其优缺点及适用范围,并列举了纳米铜基导电薄膜在下一代柔性电子产品领域的典型应用. 在此基础上,对纳米铜柔性导电薄膜制造尚存的主要问题进行了总结,并对其未来发展趋势进行了展望.
  • 激光焊接的薄板十字结构由于其工艺性易出现未熔合、未焊透等缺陷,严重影响构件的使用性能,因此有效识别十字焊接接头的内部缺陷十分必要. 由于检测盲区的存在,常规超声检测无法实现对薄板的检测,Lamb波因其传播速度快、距离长、成本低,已广泛地用于板状结构、大型管道等的无损检测和评价中[1-2]. 然而Lamb波因存在多模态、频散特性,以及检测机理的复杂性,Lamb波检测技术仍存在很多不一致的观点,如Lamb波与不同缺陷、不同结构的作用机理对缺陷的表征等.

    目前针对薄板Lamb检测国内外已经有大量研究. 英国谢菲尔德大学Lee等人[3]模拟了A0和S0模态Lamb波在铝板中的传播和与槽类缺陷的相互作用,土耳其马尔马拉大学Senyurek等人[4]采用Lamb波有效检测出飞机机翼板的切口损伤及冲击损伤. 哈尔滨工业大学的刚铁等人[5]采用有限元方法模拟并验证了A0波、S0波识别薄板槽类缺陷的可行性. 对于焊接结构缺陷的Lamb波检测国内外研究并不多. 贝鲁特美国大学Hamade等人[6]、Fakih等人[7]研究了Lamb波用于搅拌摩擦焊对接接头焊缝内部缺陷的检测与评估,建立了基于回波信号幅值的损伤指数. 国内对焊接结构中的缺陷识别及表征方面研究较多[8-10],采用Lamb波方法识别焊接结构缺陷的研究较少,哈尔滨工业大学的刘磊等人[11]实现了对复杂薄壁结构钎焊接头的检测.

    文中首先采用有限元分析方法仿真了A0和S0模态Lamb波与缺陷的作用结果,并在此基础上,通过试验方法找到不同模态Lamb波的最佳入射点和激励角度,最后探讨了A0和S0模态Lamb波用于识别薄板十字焊接结构未焊透缺陷及缺陷尺寸表征的可行性.

    实际焊接试件是由两块薄板侧面开槽后相互交叉焊接而成,一般有两道焊缝,均为十字接头角焊缝. 其焊接缺陷主要为未焊透. 焊件如图1所示. 对于无缺陷焊件则采取四束激光分别从两侧上下倾斜45°进行焊接,以保证全焊透. 该焊件材料为1Cr18Ni9Ti不锈钢,焊件总长度为240 mm,十字焊接接头至板端距离为50 mm,板厚为1.9 mm.

    图  1  焊接试件的制备
    Figure  1.  Preparation for welding specimen. (a) schematic diagram of sample geometry and defects ; (b) welding specimen

    采用有限元分析方法构建数值仿真模型,其几何模型尺寸及结构与实际焊接试件一致,模型中的缺陷长度分别为0.4,0.8,1.2 mm,缺陷宽度均为0.01 mm,有限元材料各向同性,材料属性中的密度、弹性模量、泊松比参数依次为7 850 kg/m3,210 GPa,0.3.

    通过波结构分析可知,A0和S0模态波在板的上下表面处的面内位移即切向位移为零,离面位移即法向位移达到最大值[12],因此模拟计算采用不同离面位移方式进行加载,且模型边界设为自由边界. 仿真激励信号采用经汉宁窗函数调制的单频5个周期叠加信号,与试验所用的正弦电压信号相同,且时频特征一致.

    考虑到试验时采用单探头自发自收脉冲回波法,有限元分析取距板左端90 mm,即距缺陷处40 mm位置作为入射点,信号接收点为距入射点沿着声波传播方向的5 mm位置处,以避免由于激励信号具有一定时间宽度而造成信号干扰.

    与实际焊接试样检测一样,通过有限元方法在相同入射点处分别激励出单一模态的A0和S0波,并模拟了不同波形在无缺陷模型和不同缺陷长度模型中的传播过程,得到了缺陷尺寸与回波反射系数的关系,如图2所示. 由该图可知,A0与未焊透缺陷尺寸呈良好线性关系,能够对缺陷长度0.4 mm以上的未焊透缺陷进行尺寸表征,而S0波回波幅值变化不大,难以检测十字结构中的未焊透缺陷.

    图  2  缺陷尺寸与回波反射系数的关系(A0/S0)
    Figure  2.  Relationship between defect size and reflection coefficient(A0/S0)

    试验采用PAC自动超声扫描成像检测系统进行,采用中心频率为2.5 MHz在0° ~ 80°间变化的可变角探头,其晶片材料为钛酸铅、尺寸为10 mm × 10 mm,压电应变常数为125 ~ 190/(10−12 m/V),采样频率100 MHz,延迟2 μs,固定增益35 dB,耦合方式为机油. 采用单探头自发自收脉冲回波法.

    在理想状态下,声束沿着矩形晶片中心轴线向前传播,在近场区声束呈四棱锥形,在远场区声束发生一定范围的扩散.

    将声束中心轴线入射到待检试件的相交点,称为几何入射点,即理论入射点. 随着入射角度的增大,仅有部分声束能进入试件,此时将声束通过探头底面的中点作为几何入射点. 探头入射点位置的准确性影响缺陷的定性、定位,采用入射点至探头前边缘的距离进行描述. 探头所接收到的信号反映是所有回到晶片声线的整体效应,这就有必要引入实测入射点的概念,其测量一般借助标准CSK-IA试块,即使得声束在100 mm半径的圆弧面产生反射,当探头接收到的回波达到最高时,认为探头底面上与圆弧圆心重合点即为实际入射点.

    由于可变角度探头的入射点与入射角度密切相关,因此确定不同模态板波的理论入射点和实测入射点更加必要. 图3给出了探头理论入射点、实测入射点与入射角度的关系,实测入射点整体上比几何入射点约大5 mm. 当入射角度大于第二临界角时,标准试块内声波主要为表面波,此时难以确定实测入射点,可根据图3实测入射点与理论入射点的关系进行几何外推.

    图  3  不同入射角的入射点位置
    Figure  3.  Location of incident points at different incident angles

    Lamb波一般采用纵波透过有机玻璃斜入射方式进行激励,入射角α

    $$ \sin \alpha {\text{ = }}C_{\rm{l}}/C_{\rm{p}} $$

    式中:Cl为有机玻璃中的纵波声速(一般取2 730 m/s);Cp为Lamb波的相速度.

    由Lamb相速度、频速度频散曲线可进一步求出,频厚积为4.75 MHz·mm(即频率与板厚的乘积)时,不同模态波形的相应相速度、群速度以及理论入射角. 将探头分别置于其入射点至板边缘40,80 mm处的无缺陷不锈钢钢板上,将入射角度从0°开始每间隔5°逐渐增大至80°,以板端回波信号的幅度为参考,可获得不同模态回波的幅度与入射角关系,如图4所示. 由该图可知,A0和S0模态波幅值最高,模态相对单一,结合频散曲线可知S2,S1和A1模态波群速度在频带宽度0.5 MHz即频厚积为0.95 MHz·mm范围内波动相对A0和S0模态波波动较大,随着波形的传播波形更宽幅值更低,且S1模态波单一性最差.

    图  4  不同模态回波幅度与入射角的关系
    Figure  4.  Relationship between signal amplitude of different modal Lamb waves and incident angles

    用激励出的A0和S0模态板波,检测无缺陷试件(0号)及不同长度未焊透缺陷的焊接试件(1号、2号、3号),其中A0波检测3号焊件的缺陷回波信号如图5a所示. 对40 ~ 60 μs时域范围内缺陷回波信号进行小波变换获得相应时频图谱,如图5b所示. 该缺陷信号主要时域范围为44 ~ 49 μs,频率主要集中在2.0 ~ 3.0 MHz区间,由群速度频散曲线可初步判断该信号主要为A0波. 对试验中4个焊件的十字焊接结构剖面进行金相观察,其中3号焊件缺陷处金相如图5c所示,其未焊透长度约为1.6 mm.0号试件未观察到未焊透缺陷,1号试件有未焊透缺陷,其长度约为1.4 mm,2号试件有两处未焊透缺陷,其长度均约为0.8 mm.

    图  5  A0波检测实际焊件
    Figure  5.  A0 mode Lamb wave detecting welded samples defect. (a) defect echo sigmal; (b) the time frequency graph of WT; (c) metallographic diagram of welded sample

    将A0和S0模态波检测不同焊件的实测回波峰值转化为反射系数,可得到缺陷回波反射系数与缺陷尺寸关系,如图6所示. 由该图可知,A0波检测的缺陷回波系数与未焊透长度呈良好正向线性关系,而S0波无此规律. 因此,采用2.5 MHz的A0波识别十字焊接结构未焊透尺寸具有良好可行性.

    图  6  缺陷尺寸与回波反射系数关系
    Figure  6.  Relationship between defect size and reflection coefficient

    (1) 仿真结合试验,确定了不同模态Lamb波的入射点、激励角度,探讨了A0和S0模态Lamb波用于识别1.9 mm厚薄板十字交叉激光焊接结构未焊透缺陷的可行性,并获得了超声Lamb波反射系数与缺陷尺寸的关系,仿真结果和试验实测结果的趋势具有较好的一致性.

    (2) 采用2.5 MHz的A0模态波能够有效检测十字焊接结构中的未焊透缺陷,且可一定程度上表征缺陷的尺寸.

    (3) 采用2.5 MHz的S0模态波检测十字焊接结构,其反射系数与缺陷尺寸相关性较差,不易于识别结构中未焊透缺陷.

  • 图  1   铜@银核壳纳米结构[28-29]

    Figure  1.   Cu@Ag nanostructures. (a) TEM image of Cu@Ag core-shell nanoparticles; (b) SME image of Cu@Ag core-shell nanowires

    图  2   典型图形化技术的示意图[51-53]

    Figure  2.   Schematic diagram of typical patterning processes. (a) planar screen printing; (b) rotary screen printing; (c) piezoelectric inkjet nozzle; (d) electrohydrodynamic inkjet system

    图  3   热烧结工艺示意图(RT表示室温,LT表示低温,HT表示高温)[56]

    Figure  3.   Schematic diagram of the thermal sintering process (RT indicates room temperature, LT indicates low temperature, and HT indicates high temperature)

    图  4   典型光子烧结技术的示意图[54,63]

    Figure  4.   Schematic diagram of typical photonic sintering processes. (a) laser sintering; (b) IPL sintering process

    图  5   其他烧结技术的示意图[74-76]

    Figure  5.   Schematic diagram of other sintering processes. (a) plasma sintering; (b) electric sintering; (c) chemical sintering

    图  6   铜基柔性导电薄膜典型应用[78-82]

    Figure  6.   Typical applications of copper-based flexible conductive films. (a) flexible thin-film antenna; (b) capacitive touch screen; (c) supercapacitor; (d) integrated flexible glucose sensor; (e) thermal conductive films

    表  1   不同前驱体纳米铜基导电油墨工艺、方法和稳定性

    Table  1   Processes, methods and stability of copper nanobased conductive inks with different precursors

    前驱体基板印刷—烧结方法方阻/电阻率温度—时间参考文献
    铜@银纳米颗粒玻璃丝网印刷—热烧结113 mΩ·sq−1室温—三周[31]
    铜@银纳米颗粒玻璃旋转丝网印刷—热烧结0.60 Ω·sq−1室温-两个月[32]
    铜@银纳米颗粒聚酰亚胺(PI)喷墨打印—热烧结3.21 μΩ·cm156 ℃-40 d[28]
    铜@银纳米颗粒玻璃喷墨打印—热烧结11 μΩ·cmNA[33]
    铜@银纳米颗粒玻璃平面丝网印刷—热烧结0.18 Ω·sq−1室温-六个月[34]
    铜@银纳米颗粒PI旋转丝网印刷—激光烧结28.5 μΩ·cmNA[35]
    铜@银纳米颗粒玻璃旋转丝网印刷—热烧结13.7 μΩ·cmNA[36]
    铜@银纳米线聚氨基甲酸酯(PU)喷墨打印—热烧结35 Ω·sq−1140 ℃-500 h[37]
    铜@金纳米线玻璃NA—热烧结35 Ω·sq−180 ℃-700 h[38]
    氧化铜纳米颗粒PINA—激光烧结31 μΩ·cmNA[30]
    氧化铜纳米颗粒玻璃旋转丝网印刷—激光烧结9.5 μΩ·cmNA[39]
    氧化铜纳米颗粒聚乙烯(PE)喷墨打印—强脉冲光烧结3.1 μΩ·cmNA[40]
    氧化铜纳米颗粒聚对苯二甲酸乙二醇酯(PET)喷墨打印—强脉冲光烧结9 μΩ·cmNA[41]
    下载: 导出CSV
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