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王权, 丁建宁, 薛伟, 凌智勇. 硅芯片外引线键合的热压焊装置及焊接工艺[J]. 焊接学报, 2006, (5): 61-64.
引用本文: 王权, 丁建宁, 薛伟, 凌智勇. 硅芯片外引线键合的热压焊装置及焊接工艺[J]. 焊接学报, 2006, (5): 61-64.
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WANG Quan, DING Jian-ning, XUE Wei, LING Zhi-yong. A novel instrument of silicon chip thermocompression outer wire bonding and jointing process research[J]. TRANSACTIONS OF THE CHINA WELDING INSTITUTION, 2006, (5): 61-64.
Citation: WANG Quan, DING Jian-ning, XUE Wei, LING Zhi-yong. A novel instrument of silicon chip thermocompression outer wire bonding and jointing process research[J]. TRANSACTIONS OF THE CHINA WELDING INSTITUTION, 2006, (5): 61-64.
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硅芯片外引线键合的热压焊装置及焊接工艺

A novel instrument of silicon chip thermocompression outer wire bonding and jointing process research

    摘要
  • 摘要: 针对压阻式微型压力传感器封装工艺中,硅芯片外引线键合的要求,分析了热压焊引线键合原理,研制了热压焊装置。在扫描电镜下,对键合点进行了微观分析。使用接合强度测试仪对压焊键合点强度进行了拉断试验,测得键合强度拉断力都在0.17 N之上。通过对金铝压焊处金属间化合物及其扩散深度随温度增长关系的研究,键合时调节压焊控制台电压使衬底温度保持在150~200℃,压焊头辟刀温度保持在150℃左右,从而保证了压焊点接触的可靠性。

     

    Abstract: In the process of piezoresistive pressure sensor packaging,the thermocompression wire bonding was studied to meet the outer interconnection of silicon gauge.A novel instrument of thermocompression wire bonding was developed.Microstructures of the joint interface were analyzed by SEM.The thermocompression wire bonding strength was tested with bonding tester.The strength was over 0.17 N.Through the investigation of the metallic compound in the interface of Au-Al and increasing of its diffusion depth with temperature,the temperature of substrate was kept between,150℃ and 200℃ and the temperature of the solder chisel was kept at about 150℃ in operation.The interface of thermocompression point was tested with good reliability.The instrument was easy to be operated and fitted for batch fabrication of piezoresistive pressure sensor.

     

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