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张宇昆, 陈继春, 张劲松. 碳化硅复合材料与碳钢钎焊接头的抗剪强度及微观结构[J]. 焊接学报, 2020, 41(7): 78-82. DOI: 10.12073/j.hjxb.20191010001
引用本文: 张宇昆, 陈继春, 张劲松. 碳化硅复合材料与碳钢钎焊接头的抗剪强度及微观结构[J]. 焊接学报, 2020, 41(7): 78-82. DOI: 10.12073/j.hjxb.20191010001
ZHANG Yukun, CHEN Jichun, ZHANG Jinsong. Microstructure and shear strength of the C/SiC and Q235 brazing joints[J]. TRANSACTIONS OF THE CHINA WELDING INSTITUTION, 2020, 41(7): 78-82. DOI: 10.12073/j.hjxb.20191010001
Citation: ZHANG Yukun, CHEN Jichun, ZHANG Jinsong. Microstructure and shear strength of the C/SiC and Q235 brazing joints[J]. TRANSACTIONS OF THE CHINA WELDING INSTITUTION, 2020, 41(7): 78-82. DOI: 10.12073/j.hjxb.20191010001

碳化硅复合材料与碳钢钎焊接头的抗剪强度及微观结构

Microstructure and shear strength of the C/SiC and Q235 brazing joints

  • 摘要: 采用磁控溅射镀膜技术对碳/碳化硅复合材料(C/SiC)表面进行镀Ti金属化,以AgCu28为钎料,无氧铜为中间层与碳钢进行钎焊连接. 研究无氧铜中间层、Ti膜厚度和钎焊温度对接头组织形貌和力学性能的影响. 结果表明,采用无氧铜中间层可有效降低接头的残余应力,提高接头强度,并阻挡C/SiC复合材料中的Si元素在钎焊过程中扩散至碳钢侧,防止了碳钢界面FeSix恶性反应层的形成. 在试验范围内,钛膜厚度和钎焊温度与接头抗剪强度之间均存在峰值关系. 860 ℃,3 μm Ti膜接头平均抗剪强度最高,达到25.5 MPa. 由剪切试样碳钢侧断口,可观察到大量平行断口方向的碳纤维和碳纤维脱粘坑. 断裂发生在C/SiC复合材料内部距界面约300 μm处. C/SiC界面反应产物以Ti5Si3为主,含少量TiC. 钎缝中有TiCuSi相生成.

     

    Abstract: C/SiC composites were deposited with Ti coating by magnetron sputtering, and brazed to Q235 with copper interlayer using AgCu28 as filler. The effects of copper interlayer, thickness of Ti coating and brazing temperature on the microstructure and mechanical properties of joints were studied in details. The results show that Cu interlayer can effectively reduce the residual stress of the joint, and obstruct the diffusion of Si element to Q235 during brazing, thus preventing the formation of FeSix reaction layer. The thickness of Ti and the brazing temperature both show a peak relationship with the shear strength of the joint. The maximum shear strength achieved 25.5 MPa at 860 ℃ with 3 μm Ti coating. A lager number of C fibers and debonding pits can be observed on the fracture surface at Q235 side. The failure occurs within the C/SiC composite about 300 μm from the interface. The reaction layer at C/SiC interface are mainly composed of Ti5Si3 phases containing a small amount of TiC phases. TiCuSi phases are formed in brazing seam.

     

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