Abstract: The electric-thermal coupling simulation analysis was performed for the electromigration process of metal interconnects based on the ABAQUS software. The influences of the different factors, including interconnects material, temperature and dielectric layer, on the electromigration failure of interconnects were compared. The results indicated that, comparison with the Al-Si alloy interconnects, the maximum value of both potential gradient and heat flux of Cu interconnects are higher for the same current density, which will accelerate the electromigration of interconnects. Comparison with temperature, current density is the major factor for influencing the electromigration lifetime of interconnects in a certain temperature range. As the insulating layer, SiN favors the heat dissipation of interconnects comparison with SiO2, which can relieve the electromigration failure of interconnects.