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SiO2陶瓷-TC4接头陶瓷侧的界面行为

刘多1,2,牛红伟2,宋晓国1,冯吉才1,赵洪运2

刘多1,2,牛红伟2,宋晓国1,冯吉才1,赵洪运2. SiO2陶瓷-TC4接头陶瓷侧的界面行为[J]. 焊接学报, 2017, 38(10): 39-42. DOI: 10.12073/j.hjxb.20151124003
引用本文: 刘多1,2,牛红伟2,宋晓国1,冯吉才1,赵洪运2. SiO2陶瓷-TC4接头陶瓷侧的界面行为[J]. 焊接学报, 2017, 38(10): 39-42. DOI: 10.12073/j.hjxb.20151124003

SiO2陶瓷-TC4接头陶瓷侧的界面行为

  • 摘要: 采用AgCu/Ni复合中间层钎焊SiO2陶瓷与TC4合金,形成良好接头;采用组织均匀,熔点为909.1℃的自制AgCuTiNi活性钎料对SiO2陶瓷进行钎焊,形成良好接头. 通过扫描电镜(SEM)和X射线衍射分析(XRD)等手段对上述两种钎焊试件的界面组织进行分析,研究Ti元素的活度对SiO2陶瓷-TC4接头陶瓷侧界面行为的影响. 结果表明,TC4/AgCu/Ni/SiO2陶瓷接头的典型界面结构为TC4合金/Ti(s,s)+Ti2(Ni,Cu)+Ti2(Cu,Ni)/Ti4O7+TiSi2/SiO2陶瓷;AgCuTiNi/SiO2陶瓷试件的典型界面结构为Ti2(Cu,Ni)/Ti(s,s)+Ti2(Ni,Cu)+Ti2(Cu,Ni)/Ti4O7+TiSi2/SiO2陶瓷. 钎焊温度为970℃,保温时间相同时,随着Ti元素活度的增强SiO2陶瓷侧反应层厚度明显增加. 钎焊温度为970℃,Ti元素活度相同时,随着保温时间的延长,SiO2陶瓷侧反应层厚度增加.
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  • 期刊类型引用(1)

    1. 丁业立,牛红伟,刘多,刘积厚,雷玉珍. K9玻璃与2507不锈钢的真空钎焊. 焊接. 2019(01): 1-4+11+65 . 百度学术

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  • 收稿日期:  2015-11-23

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