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热循环条件下高密度倒装微铜柱凸点失效行为分析

任宁, 田野, 吴丰顺, 尚拴军

任宁, 田野, 吴丰顺, 尚拴军. 热循环条件下高密度倒装微铜柱凸点失效行为分析[J]. 焊接学报, 2016, 37(10): 25-28.
引用本文: 任宁, 田野, 吴丰顺, 尚拴军. 热循环条件下高密度倒装微铜柱凸点失效行为分析[J]. 焊接学报, 2016, 37(10): 25-28.
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REN Ning, TIAN Ye, WU Fengshun, SHANG Shuanjun. Analysis on failure behavior of micro copper pillar bump for high density flip chip packaging under thermal cycle[J]. TRANSACTIONS OF THE CHINA WELDING INSTITUTION, 2016, 37(10): 25-28.
Citation: REN Ning, TIAN Ye, WU Fengshun, SHANG Shuanjun. Analysis on failure behavior of micro copper pillar bump for high density flip chip packaging under thermal cycle[J]. TRANSACTIONS OF THE CHINA WELDING INSTITUTION, 2016, 37(10): 25-28.
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热循环条件下高密度倒装微铜柱凸点失效行为分析

  • 1.

    河南工业大学 机电工程学院, 郑州 450001;华中科技大学 武汉光电国家实验室, 武汉 430074

  • 2.

    河南工业大学 机电工程学院, 郑州 450001

  • 3.

    华中科技大学 武汉光电国家实验室, 武汉 430074

基金项目: 国家自然科学基金资助项目（U1504507）；河南省科技攻关资助项目（162102410018）

Analysis on failure behavior of micro copper pillar bump for high density flip chip packaging under thermal cycle

  • 1.

    School of Mechanic & Electrical Engineering, Henan University of Technology, Zhengzhou 450001, China;Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

  • 2.

    School of Mechanic & Electrical Engineering, Henan University of Technology, Zhengzhou 450001, China

  • 3.

    Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

摘要

    摘要
  • 摘要: 基于圣维南原理，采用全局模型和子模型相结合的建模方针，建立倒装芯片封装的有限元模型.分析热循环条件下微铜柱凸点的应力及应变分布，研究高密度倒装芯片封装微铜柱凸点的失效机理，对关键微铜柱凸点的裂纹生长行为进行分析.结果表明，距芯片中心最远处的微铜柱凸点具有最大的变形与应力，为封装体中的关键微铜柱凸点；累积塑性应变能密度主要分布在关键微铜柱凸点的基板侧，在其外侧位置最大，向内侧逐渐减小，这表明裂纹萌生在基板侧微铜柱凸点外侧，向内侧扩展，试验结果与模拟结果相一致.
    Abstract: Based on the Saint Venant's principle, the finite element model of flip chip packaging was established by combing the global model and sub model. The stress and strain of the micro copper pillar bumps were analyzed to study the failure mechanism of the micro copper pillar bumps by high density flip chip packaging and to analyze the crack growth behavior of the key micro copper pillar bump. The results show that the micro copper pillar bump with the maximum distance from the center of the chip has the biggest deformation and the highest stress, which is the key micro copper pillar bump of the flip chip packaging. The accumulative plastic strain energy density are mainly distributed on the substrate side of the key micro copper pillar bump, and the maximum accumulative plastic strain energy density is outside of the micro copper pillar bump, and gradually decreases towards the inside, which shows that the crack initiation appears on the outside of the micro copper pillar bump at substrate side, and expands from the outside to the inside of the solder throughout the whole micro copper pillar bump, eventually lead to the failure. The results are consistent with the simulation results.
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    • 参考文献(13)
  • [1] Gallois-Garreignot S, Benzima N, Benmussa E, et al. Qualification of bumping processes: experimental and numerical investigations on mechanical stress and failure modes induced by shear test[J]. Microelectronics Reliability, 2015, 55(6): 387-391.
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  • 收稿日期:  2015-12-01

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