高级检索

一种基于点压技术的新型晶圆键合方法

许维, 王盛凯, 徐杨, 王英辉, 陈大鹏, 刘洪刚

许维, 王盛凯, 徐杨, 王英辉, 陈大鹏, 刘洪刚. 一种基于点压技术的新型晶圆键合方法[J]. 焊接学报, 2016, 37(9): 125-128.
引用本文: 许维, 王盛凯, 徐杨, 王英辉, 陈大鹏, 刘洪刚. 一种基于点压技术的新型晶圆键合方法[J]. 焊接学报, 2016, 37(9): 125-128.
shu
XU Wei, WANG Shengkai, XU Yang, WANG Yinghui, CHEN Dapeng, LIU Honggang. A new wafer bonding method based on spot pressing technique[J]. TRANSACTIONS OF THE CHINA WELDING INSTITUTION, 2016, 37(9): 125-128.
Citation: XU Wei, WANG Shengkai, XU Yang, WANG Yinghui, CHEN Dapeng, LIU Honggang. A new wafer bonding method based on spot pressing technique[J]. TRANSACTIONS OF THE CHINA WELDING INSTITUTION, 2016, 37(9): 125-128.
shu

一种基于点压技术的新型晶圆键合方法

  • 1.

    中国科学院微电子研究所 微电子器件与集成技术重点实验室, 北京 100029;中国科学院微电子研究所 高频高压器件与集成研发中心, 北京 100029

  • 2.

    中国科学院微电子研究所 高频高压器件与集成研发中心, 北京 100029;中国科学院微电子研究所 智能感知研发中心, 北京 100029

  • 3.

    中国科学院微电子研究所 智能感知研发中心, 北京 100029

A new wafer bonding method based on spot pressing technique

  • 1.

    Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Beijing 100029, China;Microwave Device and IC Dept., Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

  • 2.

    Microwave Device and IC Dept., Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Smart Sensing R & D Centre, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

  • 3.

    Smart Sensing R & D Centre, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

摘要

    摘要
  • 摘要: 金金热压键合法在半导体制造领域中应用广泛，为了进一步改进该键合方法，首次提出了一种基于点压技术的新型晶圆键合方法，并研究了工艺温度、压强以及时间对点压键合法单点键合面积的影响. 通过超声扫描显微镜图像，着重比较了传统金金热压键合法与点压键合法的键合面积比. 对点压键合法的可选择键合性进行了讨论. 结果表明，点压键合法工艺步骤简单，工艺稳定性较好，且具有一定的可选择键合特性，在半导体制造领域中将具有广泛的应用前景.
    Abstract: Au-Au thermocompression bonding is widely used in many applications of semiconductor manufacturing. In order to improve the bonding method, a new wafer bonding method based on spot pressing technique was proposed for the first time. The bonded area dependence of bonding temperature, pressure and time were investigated. In addition, the bonded area ratio was compared between conventional Au-Au thermocompression bonding and spot pressing bonding by the image of scanning acoustic microscopy. The bonded area selectivity of SPB was discussed at the end of this article. The results show that the bonding process is simple and stable and the bonded area selectivity is also good in spot pressing bonding. which has an extesive prospect in applications of semiconductor manufacturing.
    • HTML全文
    • 参考文献(10)
  • [1] Bruel M, Aspar B, Auberton-Herve A J. Smart-cut: a new silicon on insulator material technology based on hydrogen implantation and wafer bonding[J]. Japanese Journal of Applied Physics, 1997, 36(Part 1, No. 3B): 1636-1641.
    [2] Höfler G E, Vanderwater D A, DeFevere D C, et al. Wafer bonding of 50-mm diameter GaP to AlGaInP-GaP light-emitting diode wafers[J]. Applied Physics Letters, 1996, 69(6):803-805.
    [3] Esashi M. Wafer level packaging of MEMS[J]. Journal of Micromechanics and Microengineering, 2008, 18(7):1-13.
    [4] Dragoi V, Mittendorfer G, Burggraf J, et al. Metal thermocompression wafer bonding for 3D integration and MEMS applications[J]. The Electrochemical Society, 2010, 33(4):27-35.
    [5] Liang D, Fang A W, Park H, et al. Low-temperature, strong SiO2-SiO2 covalent wafer bonding for III-V compound semiconductors-to-silicon photonic integrated circuits[J]. Journal of Electronic Materials, 2008, 37(10):1552-1559.
    [6] Gui C, Elwenspoek M, Tas N, et al. The effect of surface roughness on direct wafer bonding[J]. Journal of Applied Physics, 1999, 85(10):7448-7454.
    [7] Taklo M M V, Storås P, Schjølberg-Henriksen K, et al. Strong, high-yield and low-temperature thermocompression silicon wafer-level bonding with gold[J]. Journal of Micromechanics and Microengineering, 2004, 14(4):884-890.
    [8] Martini T,Steinkirchner J, Gösele U, et al. The crack opening method in silicon wafer bonding[J]. The Electrochemical Society, 1997, 144(1):354-357.
    [9] Ang X F, Zhang G G, Wei J, et al. Temperature and pressure dependence in thermocompression gold stud bonding[J]. Thin Solid Films, 2006, 504:379-383.
    [10] Liang D, Bowers J E.Highly ef cient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate[J]. Journal of Vacuum Science & Technology B, 2008, 26(4):1560-1568.
    • 相关文章
    • 施引文献(8)

  • 期刊类型引用(7)

    1. 王星星，彭进，崔大田，薛鹏，李红，胡安明，孙国元. 银基钎料在制造业中的研究进展. 材料导报. 2018(09): 1477-1485 . 百度学术
    2. 张冠星，龙伟民，郭艳红，何鹏，薛鹏. 基于镀镍中间层的铜基轴瓦用锡基浸渍合金研究. 材料导报. 2018(S1): 378-380+399 . 百度学术
    3. 王星星，李帅，彭进，孙国元. 基于镀锡银钎料钎焊304不锈钢接头的腐蚀行为. 焊接学报. 2018(04): 63-66+132 . 本站查看
    4. 王星星，彭进，薛鹏，王建升，李权才，谭群燕. AgCuZnSn钎料制备方法及合金化的研究进展. 材料导报. 2017(15): 87-94 . 百度学术
    5. 王星星，彭进，崔大田，杜全斌，龙伟民. 镀锡AgCuZnSn钎料熔化特性的热力学分析. 稀有金属材料与工程. 2017(09): 2583-2588 . 百度学术
    6. 王星星，彭进，李帅，薛鹏，孙国元. 电镀锡银钎料的均匀腐蚀性和抗氧化性分析. 焊接学报. 2017(12): 37-40+130-131 . 本站查看
    7. 王星星，彭进，崔大田，唐明奇，龙伟民. 镀锡银钎料钎焊316LN不锈钢的接头组织及力学性能. 稀有金属. 2017(10): 1167-1172 . 百度学术

    其他类型引用(1)

    • 资源附件(0)
计量
  • 文章访问数:  623
  • HTML全文浏览量:  8
  • PDF下载量:  225
  • 被引次数: 8
出版历程
  • 收稿日期:  2016-03-12

目录

摘要
HTML全文
    参考文献(10)
    相关文章
    施引文献
    资源附件(0)

    /

    返回文章
    返回

    网站版权 © 焊接杂志社焊接学报编辑部电话：0451-86323218地址：哈尔滨市松北区创新路2077号

    本系统由 北京仁和汇智信息技术有限公司 开发  百度统计