Abstract: With perfect structural design and manufacturing processes, the switching performance of Si power devices has reached the theoretical limit determined by material properties, and is unable to meet requirements for compact size, high temperature, high power density, high voltage, high frequency and anti-radiation and other harsh working conditions for new generation of high-performance arc welding inverter. Wide bandgap (WBG) semiconductor is a revolutionary power electronic material, and it is the main development direction for next generation of power electronic devices. This paper describes the basic characteristics, types and development of WBG power devices, and focuses on urgent and key scientific and technical issues when WBG power devices are applied to arc welding inverter. This research lays a foundation for facilitating and promoting the development and application of next generation WBG arc welding inverter.