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新一代功率芯片耐高温封装连接国内外发展评述

冯洪亮, 黄继华, 陈树海, 赵兴科

冯洪亮, 黄继华, 陈树海, 赵兴科. 新一代功率芯片耐高温封装连接国内外发展评述[J]. 焊接学报, 2016, 37(1): 120-128.
引用本文: 冯洪亮, 黄继华, 陈树海, 赵兴科. 新一代功率芯片耐高温封装连接国内外发展评述[J]. 焊接学报, 2016, 37(1): 120-128.
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FENG Hongliang, HUANG Jihua, CHEN Shuhai, ZHAO Xingke. Review on high temperature resistant packaging technology for new genetation power semiconductor devices[J]. TRANSACTIONS OF THE CHINA WELDING INSTITUTION, 2016, 37(1): 120-128.
Citation: FENG Hongliang, HUANG Jihua, CHEN Shuhai, ZHAO Xingke. Review on high temperature resistant packaging technology for new genetation power semiconductor devices[J]. TRANSACTIONS OF THE CHINA WELDING INSTITUTION, 2016, 37(1): 120-128.
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新一代功率芯片耐高温封装连接国内外发展评述

  • 北京科技大学 材料科学与工程学院, 北京 100083

基金项目: 国家自然科学基金资助项目(51474026)

Review on high temperature resistant packaging technology for new genetation power semiconductor devices

  • School of Material Science and Engineering, University of Science and Technology Beijing, Beijing 100083

摘要

    摘要
  • 摘要: 新一代半导体高温功率芯片可在500 ℃左右甚至更高的温度下服役,耐高温封装已成为其高温应用的主要障碍. 针对当前高温功率芯片耐高温封装连接问题,从芯片耐高温封装连接的结构及要求、芯片的耐高温封装连接方法(包括高温无铅钎料封装连接、银低温烧结连接、固液互扩散连接和瞬时液相烧结连接)及存在的问题等方面对国内外研究现状、动态进行了分析和评述,并提出了今后高温功率芯片耐高温封装连接的研究重点和发展方向.
    Abstract: The new generation semiconductor materials have good conversion characteristics and heat tolerance, enabling the power electronic devices to operate at 500 ℃ or even higher, however, their usage over such wide temperature ranges is limited by the temperature stability of packag. This paper presents the structural requirements of high temperature resistant packagingand analyzes the current research status of high temperature resistant joining technologies (including high temperature lead-free solder joining, low temperature silver sintering-bonding, solid-liquid inter-diffusion bonding and transient liquid phase sintering-bonding) as well as problems. The future challenge and prospect related to high temperature resistant packaging is also proposed in this article.
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