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3D-TSV互连结构随机振动加载应力分析

Study on stress distribution of 3D-TSV interconnect structure under random vibration load

  • 摘要: 建立了三维硅通孔 (three-dimension through silicon via,3D-TSV )互连结构有限元分析模型,对该模型进行了随机振动加载有限元分析. 选取TSV高度、TSV直径、微凸点高度和微凸点直径四个结构参数作为关键因素,采用水平正交表L16(45)设计了16种不同结构参数的3D-TSV互连结构,获取了这16种3D-TSV互连结构随机振动应力数据并进行了方差分析. 结果表明,在置信度为99%的情况下,TSV高度对3D-TSV互连结构随机振动应力有显著影响,因素显著性的排序由大到小为TSV高度最大,其次为TSV直径,再次为微凸点直径,最后是微凸点高度;单因子变量分析表明,TSV互连结构应力应变随TSV高度的增加而增大.

     

    Abstract: The 3D finite element analysis models of 3D-TSV interconnect structure were developed. By using ANSYS, the finite element analysis of the stress distribution in the model was performed under the condition of thermal-structure coupling. The TSV height and the TSV diameter, the micro-bump height and the micro-bump diameter were selected as four key configuration parameters, combinations were designed. By using an L16(45) orthogonal array the 3D-TSV which have 16 different configuration parameters' levels. The maximum stress values within 3D-TSV were obtained. Variance analysis was performed based on the values of stress. The results show that the TSV height has highly significant impact on the stress of 3D-TSV under random vibration with 99% confidence. The TSV height, the TSV diameter, the micro-bump diameter and the micro-bump height affect the stress of 3D-TSV in a descending order. The single-factor analysis of variance shows that the stress and strain in TSV interconnect structure increase with the height of TSV.

     

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