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铝硅合金互连线电迁移失效试验

崔海坡, 邓登

崔海坡, 邓登. 铝硅合金互连线电迁移失效试验[J]. 焊接学报, 2015, 36(4): 21-24.
引用本文: 崔海坡, 邓登. 铝硅合金互连线电迁移失效试验[J]. 焊接学报, 2015, 36(4): 21-24.
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CUI Haipo, DENG Deng. Electromigration failure of Al-Si interconnects[J]. TRANSACTIONS OF THE CHINA WELDING INSTITUTION, 2015, 36(4): 21-24.
Citation: CUI Haipo, DENG Deng. Electromigration failure of Al-Si interconnects[J]. TRANSACTIONS OF THE CHINA WELDING INSTITUTION, 2015, 36(4): 21-24.
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铝硅合金互连线电迁移失效试验

  • 上海理工大学教育部微创医疗器械工程中心, 上海 200093

基金项目: 国家自然科学基金资助项目(51305268);航空科学基金资助项目(20110247001)

Electromigration failure of Al-Si interconnects

  • Shanghai Institute for Minimally Invasive Therapy, University of Shanghai for Science and Technology, Shanghai 200093, China

摘要

    摘要
  • 摘要: 随着微电子技术的发展,作为超大规模集成电路互连线的金属薄膜的截面积越来越小,其承受的电流密度急剧增加,电迁移引起的互连失效变得尤为突出.针对集成电路中金属互连线的电迁移现象,以Black方程为基础,对其进行了修正.并以铝硅合金互连线为研究对象,对其电迁移过程进行了详细的加速寿命试验研究,获取了修正后的Black方程中的相关参数,分析了不同环境温度、不同电流密度、不同初始电阻等因素对铝互连线电迁移的影响规律.结果表明,铝硅合金互连线的电迁移寿命与上述参数均成反比关系.
    Abstract: With development of microelectronics technology, the cross-sectional area of metal film used in very large scale integrated circuit interconnects are getting smaller and smaller, causing a sharp increase in its exposure of current density. Interconnects failure induced by electromigration has become particularly prominent. In accordance with the electromigration of metal interconnects in integrated circuits, the Black equation was modified. The electromigration of Al-Si interconnects was investigated by accelerated life time test. The relevant parameters of modified Black equation were obtained. The influence of test temperature, current density, initial resistance on the electromigration of Al-Si interconnects were analyzed. The results indicate that the electromigration life of Al-Si interconnects is inversely proportional to those parameters.
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    • 参考文献(12)
  • [1] Chu M H, Liang S W, Chen C H, et al. Electromigration failure mechanism in Sn-Cu solder alloys with OSP Cu surface finish[J]. Journal of Electronic Materials, 2012, 41(9):2502-2507.
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    [10] Ye H, Basaran C, Hopkins D C. Pb phase coarsening in eutectic Pb/Sn flip chip solder joints under electric current stressing[J]. International Journal of Solids and Structures, 2004, 41:2743-2755.
    [11] JEDEC. JESD63 Standard. Standard method for calculating electro-migration model parameters for current density and dtemperature[S]. USA:JEDEC Solid State Technology Association, 2007.
    [12] Rattalino I, Motto P, Piccinini G, et al. A new validation method for modeling nanogap fabrication by electromigration based on the resistance-voltage (R-V) curve analysis[J]. Physics Letters, 2012, 376:30-31.
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出版历程
  • 收稿日期:  2013-09-10

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