Abstract: With development of microelectronics technology, the cross-sectional area of metal film used in very large scale integrated circuit interconnects are getting smaller and smaller, causing a sharp increase in its exposure of current density. Interconnects failure induced by electromigration has become particularly prominent. In accordance with the electromigration of metal interconnects in integrated circuits, the Black equation was modified. The electromigration of Al-Si interconnects was investigated by accelerated life time test. The relevant parameters of modified Black equation were obtained. The influence of test temperature, current density, initial resistance on the electromigration of Al-Si interconnects were analyzed. The results indicate that the electromigration life of Al-Si interconnects is inversely proportional to those parameters.