金刚石厚膜与硬质合金的连接
Bonding of Diamond Thick Films/Cemented Carbide
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摘要: 采用扩散焊与钎焊相结合的方法,用Ti箔和Ag-Cu箔共同做中间层材料,在一定的温度、压力和保温时间下,实现了气相沉积金刚石厚膜与硬质合金间的牢固连接。经扫描电镜和电子探针分析发现,在金刚石与中间层界面近区有C、Ti元素的相互扩散,并且观察断口发现:断裂大部分发生在中间层上,只有局部区域金刚石的表面暴露出来。这可以说明金刚石与钎料之间已形成了牢固的冶金连接。Abstract: The bonding between chemical vapor deposition (CVD) thick films diamond and cemented carbide was performed by diffusion brazing under controlled temperature, pressure and time. The filled intermediate layer materials are reactive metal Ti foil and Ag-Cu alloy foil.The results show that the diffusion of C and Ti elements occurred on the interface between the diamond and the filled intermediate layer.The rupture occur in the filled material.It can be considered that metallurgical bonding has formed in the interface between diamond-intermediate.