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高导热石墨/铝合金钎焊散热封装工艺

Brazing and thermal packaging process of high thermal conductivity graphite/aluminum alloy

  • 摘要: 为了实现高导热石墨与铝合金(5A06)的可靠低温钎焊连接,采用Sn-Pb钎料进行钎焊,并研究其在母材表面的铺展行为. 结果表明,通过对高导热石墨表面进行金属化处理,有效改善了金属与石墨之间的润湿性,解决了由于热膨胀系数不匹配引起的界面问题,并降低了因声子散射导致的界面接触热阻. 在优化的工艺条件下,即Ag-Cu-Ti钎料层厚度为0.2 mm、钎焊温度860 ℃、保温时间10 min 的金属化处理工艺,以及Sn-Pb钎料钎焊温度210 ℃、保温时间15 min 的钎焊工艺,制备得到的复合结构整体导热性能显著提升. 此外,设计并测试了一款均热板产品,以评估其散热性能. 试验结果表明,尺寸为 210 mm× 25 mm× 3.5 mm 的条状均热板,其导热系数可高达 558 W/(m·K),而尺寸为 233.4 mm× 200 mm× 24 mm 的大型均热板适用于大型集成电子设备,其最大导热系数可达 460 W/(m·K). 试验结果不仅展示了钎焊技术在提升热管理效率方面的潜力,也为高性能电子设备的热管理提供了新的材料解决方案.

     

    Abstract: In order to achieve reliable low-temperature brazing of high-thermal-conductivity graphite and aluminum alloy (5A06), Sn-Pb solder was used for brazing, and its spreading behavior on the base material was studied. The results show that metallization of the high-thermal-conductivity graphite surface effectively improves the wettability between metal and graphite, mitigates interfacial issues caused by mismatched thermal expansion coefficients, and reduces interfacial thermal resistance due to phonon scattering. Under optimized process conditions—Ag-Cu-Ti solder layer thickness of 0.2 mm, brazing temperature of 860 ℃, and holding time of 10 min for the metallization process, along with Sn-Pb solder brazing at 210 ℃ with a holding time of 15 min—the overall thermal conductivity of the composite structure was significantly enhanced. Furthermore, a heat spreader was designed and tested to evaluate its thermal performance. Experimental results show that a strip-shaped heat spreader with dimensions of 210 mm× 25 mm× 3.5 mm achieves a thermal conductivity of up to 558 W/(m·K), while a larger heat spreader with dimensions of 233.4 mm× 200 mm× 24 mm, suitable for large-scale integrated electronic devices, reaches a maximum thermal conductivity of 460 W/(m·K). This study not only demonstrates the potential of brazing technology in improving thermal management efficiency but also provides a novel material solution for the thermal management of high-performance electronic devices.

     

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