Abstract: Si-glass-Si was successfully bonded together through a two-step anodic bonding process. The bonding current in each step of the two-step bonding process was investigated, and found to be quite different. The first bonding current decreased quickly to a relatively small value. But for the second bonding step, there were two current peaks, the current varified as decrease-increase-decreased rule. SEM was conducted to investigate the interfacial structure of the Si-glass-Si samples. Tensile tests indicated that the fracture occurred at the glass substrate and bonding strength increased with the increment of the bonding voltage.