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电子封装中Cu/Sn/Cu焊点组织演变及温度对IMC立体形貌影响

梁晓波,李晓延,姚鹏,李扬

梁晓波,李晓延,姚鹏,李扬. 电子封装中Cu/Sn/Cu焊点组织演变及温度对IMC立体形貌影响[J]. 焊接学报, 2018, 39(9): 49-54. DOI: 10.12073/j.hjxb.2018390223
引用本文: 梁晓波,李晓延,姚鹏,李扬. 电子封装中Cu/Sn/Cu焊点组织演变及温度对IMC立体形貌影响[J]. 焊接学报, 2018, 39(9): 49-54. DOI: 10.12073/j.hjxb.2018390223
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LIANG Xiaobo, LI Xiaoyan, YAO Peng, LI Yang. Microstructural evolution of Cu/Sn/Cu joints and effect of temperature on three-dimensional morphology of IMCs in packaging technology[J]. TRANSACTIONS OF THE CHINA WELDING INSTITUTION, 2018, 39(9): 49-54. DOI: 10.12073/j.hjxb.2018390223
Citation: LIANG Xiaobo, LI Xiaoyan, YAO Peng, LI Yang. Microstructural evolution of Cu/Sn/Cu joints and effect of temperature on three-dimensional morphology of IMCs in packaging technology[J]. TRANSACTIONS OF THE CHINA WELDING INSTITUTION, 2018, 39(9): 49-54. DOI: 10.12073/j.hjxb.2018390223
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电子封装中Cu/Sn/Cu焊点组织演变及温度对IMC立体形貌影响

  • 北京工业大学 材料科学与工程学院, 北京 100124

基金项目: 国家自然科学基金（5157011）；北京市自然科学基金（2162002）

Microstructural evolution of Cu/Sn/Cu joints and effect of temperature on three-dimensional morphology of IMCs in packaging technology

  • College of Materials Science and Engineering, Beijing university of technology, Beijing 100124, China

摘要

    摘要
  • 摘要: 通过电镀的方法在抛磨好的铜基体沉积4 μm的锡层，并组合成一个Cu/Sn/Cu结构.分别选择240℃、1 N作为钎焊温度和钎焊压力，在不同的钎焊时间下制备焊点，分析了Cu/Sn/Cu焊点组织演变规律.分别制备了不同钎焊温度下（240，270，300℃） Cu6Sn5和Cu3Sn的立体形貌，分析了温度对Cu6Sn5和Cu3Sn立体形貌的影响规律.结果表明，钎焊30 min后Cu6Sn5为平面状，随着钎焊时间的增加逐渐转变成扇贝状.在扇贝底部的Cu3Sn要比扇贝两侧底部的Cu3Sn厚.增加钎焊时间锡不断被反应，上下两侧Cu6Sn5连成一个整体.继续增加钎焊时间Cu6Sn5不断转变成为Cu3Sn.随着钎焊温度的升高Cu6Sn5的立体形貌逐渐由多面体状转变成匍匐状，而Cu3Sn晶粒随着钎焊温度上升不断减小.
    Abstract: A 4 μm thick Sn film was deposited on the copper substrate by electroplating. Two copper substrates with electroplated Sn were constituted of a Cu/Sn/Cu structure. 240℃ and 1 N were chosen as soldering temperature and pressure to be soldered for different time to investigate the law of microstructural evolution of IMCs. The three-dimensional morphology of Cu6Sn5 and Cu3Sn under different soldering temperature(240, 270, 300℃) were fabricated, Investigate the effect of temperature on three-dimensional morphology. The results show Cu6Sn5 was planar after soldered for 30 min and turned into scallop-like with the increase of soldering time. Cu3Sn in the bottom of scallop was thicker than that in bottom of scallop on both sides. Sn was reacted with the increase of soldering time, Cu6Sn5 in the two side merged into a whole gradually. Increase more soldering time, Cu6Sn5 continued to be transformed into Cu3Sn. The three-dimensional of Cu6Sn5 transformed from polyhedron shape to procumbent and the size of Cu3Sn grains decreased gradually with the increase of soldering temperature.
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    • 参考文献(14)
  • [1] 尹立孟, 杨艳, 刘亮岐. 电子封装微互连焊点力学行为的尺寸效应[J]. 金属学报, 2009, 45(4):422-427 Yin Limeng, Yang Yan, Liu Liangqi. Size effect of mechanical behavior of miniature solder joint interconnections in electronic packaging[J]. Acta Metallurgica Sinica, 2009, 45(4):422-427, doi: 10.3321/j.issn:0412-1961.2009.04.008
    [2] Shigetou A, Itoh T, Sawada K, et al. Bumpless interconnect of 6μm pitch Cu electrodes at room temperature[J]. Electronic Components & Technology Conference, 2008, 31(3):1405-1409.
    [3] Mo L, Wu F, Liu C. Growth kinetics of IMCs in Cu-Sn intermetallic joints during isothermal soldering process[J]. Electronic Components & Technology Conference, 2015(3):1854-1858.
    [4] Labie R, Limaye P, Lee K W, et al. Reliability testing of Cu-Sn intermetallic micro-bump interconnections for 3D-device stacking[C]//Berlin:2010 Electronic System-Integration Technology Conference (ESTC), 2010:1-5.
    [5] Huang Z, Jones R E, Jain A. Experimental investigation of electromigration failure in Cu-Sn-Cu micropads in 3D integrated circuits[J]. Microelectronic Engineering, 2014, 122(25):46-51.
    [6] Luu T T, Duan A, KE Aasmundtveit, et al. Optimized Cu-Sn wafer-level bonding using intermetallic phase characterization[J]. Journal of Electronic Materials, 2013, 42(12):3582-3592. doi: 10.1007/s11664-013-2711-z
    [7] 杨东升. 三维封装芯片固液互扩散低温键合机理研究[D]. 哈尔滨:哈尔滨工业大学, 2012.
    [8] Wieland R, Klumpp A, Ramm P. 3D system integration for high density interconnects[J]. Micro Optoelectronic Materials, 2007(03-07):64-68.
    [9] 吕亚平, 刘孝刚, 陈明祥, 等. 含TSV结构的3D封装多层堆叠Cu/Sn键合技术[J]. 半导体技术, 2014, 39(1):64-70 Lü Yaping, Liu Xiaogang, Chen Mingxiang, et al. Multilayer stack Cu/Sn bonding technology for 3D packaging with TSV[J]. Semiconductor Technology, 2014, 39(1):64-70
    [10] Lee B, Park J, Jeon S, et al. A study on the bonding process of Cu bump/Sn/Cu bump bonding structure for 3D packaging applications[J]. Journal of The Electrochemical Society, 2010, 157(4):H420-H424. doi: 10.1149/1.3301931
    [11] Cao Y, Ning W, Luo L. Wafer-level package with simultaneous TSV connection and cavity hermetic sealing by solder bonding for MEMS device[J]. IEEE Transactions on Electronics Packaging Manufacturing, 2009, 32(3):125-132. doi: 10.1109/TEPM.2009.2021766
    [12] Li J F, Agyakwa P A, Johnson C M. Interfacial reaction in Cu/Sn/Cu system during the transient liquid phase soldering process[J]. Acta Materialia, 2011, 59(3):1198-1211. doi: 10.1016/j.actamat.2010.10.053
    [13] Ma D, Wang W D, Lahiri S K. Scallop formation and dissolution of Cu-Sn intermetallic compound during solder reflow[J]. Journal of Applied Physics, 2002, 91(5):3312-3317. doi: 10.1063/1.1445283
    [14] Gusak A M, Tu K N. Kinetic theory of flux-driven ripening[J]. Physical Review B, 2002, 66(11):115403. doi: 10.1103/PhysRevB.66.115403
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  • 收稿日期:  2017-04-29

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